• All sections
  • H - Electricity
  • H01L - Semiconductor devices not covered by class
  • H01L 27/11582 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

Patent holdings for IPC class H01L 27/11582

Total number of patents in this class: 6037

10-year publication summary

52
260
644
614
850
1137
1121
881
609
79
2015 2016 2017 2018 2019 2020 2021 2022 2023 2024

Principal owners for this class

Owner
All patents
This class
Samsung Electronics Co., Ltd.
131630
1158
Kioxia Corporation
9847
1000
Sandisk Technologies LLC
5684
872
Micron Technology, Inc.
24960
817
SK Hynix Inc.
11030
582
Yangtze Memory Technologies Co., Ltd.
1940
576
Macronix International Co., Ltd.
2562
174
Applied Materials, Inc.
16587
87
Lodestar Licensing Group LLC
583
78
Sunrise Memory Corporation
192
66
Taiwan Semiconductor Manufacturing Company, Ltd.
36809
57
Tokyo Electron Limited
11599
54
Semiconductor Energy Laboratory Co., Ltd.
10902
38
Intel NDTM US LLC
373
33
Toshiba Memory Corporation
255
28
Lam Research Corporation
4775
27
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
1115
24
Institute of Microelectronics, Chinese Academy of Sciences
1290
20
Intel Corporation
45621
19
ASM IP Holding B.V.
1715
19
Other owners 308