- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 27/11582 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Patent holdings for IPC class H01L 27/11582
Total number of patents in this class: 6037
10-year publication summary
52
|
260
|
644
|
614
|
850
|
1137
|
1121
|
881
|
609
|
79
|
2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Samsung Electronics Co., Ltd. | 131630 |
1158 |
Kioxia Corporation | 9847 |
1000 |
Sandisk Technologies LLC | 5684 |
872 |
Micron Technology, Inc. | 24960 |
817 |
SK Hynix Inc. | 11030 |
582 |
Yangtze Memory Technologies Co., Ltd. | 1940 |
576 |
Macronix International Co., Ltd. | 2562 |
174 |
Applied Materials, Inc. | 16587 |
87 |
Lodestar Licensing Group LLC | 583 |
78 |
Sunrise Memory Corporation | 192 |
66 |
Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
57 |
Tokyo Electron Limited | 11599 |
54 |
Semiconductor Energy Laboratory Co., Ltd. | 10902 |
38 |
Intel NDTM US LLC | 373 |
33 |
Toshiba Memory Corporation | 255 |
28 |
Lam Research Corporation | 4775 |
27 |
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1115 |
24 |
Institute of Microelectronics, Chinese Academy of Sciences | 1290 |
20 |
Intel Corporation | 45621 |
19 |
ASM IP Holding B.V. | 1715 |
19 |
Other owners | 308 |